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Carbon Nanotube Transistors: Nanotube Growth, Contact Properties and Novel Devices


Please use this identifier to cite or link to this item: http://hdl.handle.net/2077/21859

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Title: Carbon Nanotube Transistors: Nanotube Growth, Contact Properties and Novel Devices
Authors: Svensson, Johannes
E-mail: johannes@physics.gu.se
Issue Date: 13-Apr-2010
University: Göteborgs universitet. Naturvetenskapliga fakulteten
Institution: Department of Physics ; Institutionen för fysik
Parts of work: I. S. Dittmer, J. Svensson and E. E. B. Campbell. Electric field aligned growth of single-walled carbon nanotubes. Current Applied Physics, 4, 595-598 (2004)
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II. J. Svensson, N. M. Bulgakova, O. A. Nerushev and E. E. B. Campbell. Marangoni effect in SiO2 during field-directed chemical vapor deposition growth of carbon nanotubes. Physical Review B, 73, 205413 (2006)
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III. J. Svensson, N. M. Bulgakova, O. A. Nerushev and E. E. B. Campbell. Field emission induced deformations in SiO2 during CVD growth of carbon nanotubes. Physica Status Solidi (b), 243, (13), 3524-3527 (2006)
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IV. D. S. Lee, J. Svensson, S. W. Lee, Y. W. Park and E. E. B. Campbell. Fabrication of Crossed Junctions of Semiconducting and Metallic Carbon Nanotubes: A CNT-Gated CNT-FET. Journal of Nanoscience and Nanotechnology, 6, (5), 1325-1330 (2006)
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V. J. Svensson, Yu. Tarakanov, D S. Lee, J. M. Kinaret, Y W. Park and E. E. B. Campbell. A carbon nanotube gated carbon nanotube transistor with 5 ps gate delay. Nanotechnology, 19, 325201 (2008)
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VI. J. Svensson, A. A. Sourab, Yu. Tarakanov, D S. Lee, S J. Park, S J. Baek, Y W. Park and E. E. B. Campbell The dependence of the Schottky barrier height on carbon nanotube diameter for Pd-carbon nanotube contacts. Nanotechnology, 20, 175204 (2009)
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Date of Defence: 2010-05-07
Disputation: Fredagen den 7 maj 2010, kl 10.15, Kollektorn, MC2 Chalmers, Kemivägen 9
Degree: Doctor of Philosophy
Publication type: Doctoral thesis
Keywords: Carbon nanotube
chemical vapour deposition
Field effect transistor
Marangoni convection
Schottky barrier
Abstract: Carbon nanotubes (CNTs) are envisioned to be used as the basic building blocks in future electronics due to their excellent electronic properties such as high mobility, compatibility with high-k dielectrics and small diameters resulting in advantageous electrostatics. This thesis is divided into three separate topics related to increasing the fabrication yield and performance of CNT field effect transistors (CNTFETs). The first part describes a method to control the orientation of CNTs during ... more
ISBN: 978-91-628-8013-2
URI: http://hdl.handle.net/2077/21859
Appears in Collections:Doctoral Theses / Doktorsavhandlingar Institutionen för fysik
Doctoral Theses from University of Gothenburg / Doktorsavhandlingar från Göteborgs universitet

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