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File | Description | Size | Format | |
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gupea_2077_21859_1.pdf | main thesis file | 6113Kb | Adobe PDF | ![]() View/Open |
gupea_2077_21859_2.pdf | abstract | 44Kb | Adobe PDF | ![]() View/Open |
Title: | Carbon Nanotube Transistors: Nanotube Growth, Contact Properties and Novel Devices |
Authors: | Svensson, Johannes |
E-mail: | johannes@physics.gu.se |
Issue Date: | 13-Apr-2010 |
University: | Göteborgs universitet. Naturvetenskapliga fakulteten |
Institution: | Department of Physics ; Institutionen för fysik |
Parts of work: | I. S. Dittmer, J. Svensson and E. E. B. Campbell.
Electric field aligned growth of single-walled carbon nanotubes.
Current Applied Physics, 4, 595-598 (2004) VIEW ARTICLE II. J. Svensson, N. M. Bulgakova, O. A. Nerushev and E. E. B. Campbell. Marangoni effect in SiO2 during field-directed chemical vapor deposition growth of carbon nanotubes. Physical Review B, 73, 205413 (2006) VIEW ARTICLE III. J. Svensson, N. M. Bulgakova, O. A. Nerushev and E. E. B. Campbell. Field emission induced deformations in SiO2 during CVD growth of carbon nanotubes. Physica Status Solidi (b), 243, (13), 3524-3527 (2006) VIEW ARTICLE IV. D. S. Lee, J. Svensson, S. W. Lee, Y. W. Park and E. E. B. Campbell. Fabrication of Crossed Junctions of Semiconducting and Metallic Carbon Nanotubes: A CNT-Gated CNT-FET. Journal of Nanoscience and Nanotechnology, 6, (5), 1325-1330 (2006) VIEW ARTICLE V. J. Svensson, Yu. Tarakanov, D S. Lee, J. M. Kinaret, Y W. Park and E. E. B. Campbell. A carbon nanotube gated carbon nanotube transistor with 5 ps gate delay. Nanotechnology, 19, 325201 (2008) VIEW ARTICLE VI. J. Svensson, A. A. Sourab, Yu. Tarakanov, D S. Lee, S J. Park, S J. Baek, Y W. Park and E. E. B. Campbell The dependence of the Schottky barrier height on carbon nanotube diameter for Pd-carbon nanotube contacts. Nanotechnology, 20, 175204 (2009) VIEW ARTICLE |
Date of Defence: | 2010-05-07 |
Disputation: | Fredagen den 7 maj 2010, kl 10.15, Kollektorn, MC2 Chalmers, Kemivägen 9 |
Degree: | Doctor of Philosophy |
Publication type: | Doctoral thesis |
Keywords: | Carbon nanotube chemical vapour deposition Field effect transistor Marangoni convection Schottky barrier |
Abstract: | Carbon nanotubes (CNTs) are envisioned to be used as the basic building blocks in future electronics due to their excellent electronic properties such as high mobility, compatibility with high-k dielectrics and small diameters resulting in advantageous electrostatics. This thesis is divided into three separate topics related to increasing the fabrication yield and performance of CNT field effect transistors (CNTFETs). The first part describes a method to control the orientation of CNTs during ... more |
ISBN: | 978-91-628-8013-2 |
URI: | http://hdl.handle.net/2077/21859 |
Appears in Collections: | Doctoral Theses / Doktorsavhandlingar Institutionen för fysik Doctoral Theses from University of Gothenburg / Doktorsavhandlingar från Göteborgs universitet |